TUBESTAR
Batch Type Horizontal Tube Furnace

The TUBESTAR solution is a flexible & compact batch-type, single or multi-chambers horizontal furnace offered by ECM Greentech. Key characteristics of this equipment are: High precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a wide range of atmospheric, sub-atmospheric or low pressure processes. The TUBESTAR furnace can also handle multiple gases and liquid precursors with a temperature range from 200 up to 1300°C. Its modular design allows to meet a large range of clean thermal treatments for universities, research laboratories, and pilot production facilities.
TS150-XT: up to 150mm wafer size
TS200-XT: up to 200mm wafer size

X = chamber/level qty from 1 to 4

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Technical Sheet

Substrate dimensions	Up to 200 mm
Substrate material	Si, SiC, GaN, Sapphire, ceramic, quartz, metal
Features	1 to 4 independent process chambers Chamber configurable for 150mm or 200mm wafer size Configurable for 25/50 or 50/100 wafers per chamber Modular and flexible with tiny footprint Excellent process precision and repeatability High performance and life-time process technology Low power consumption and low carbon print Over 30 years process expertise 3 zones resistive heaters up to 1300°C Up to 9 thermocouples with Digital Direct Temperature Control (DDTC) Temperature regulation modes Internal, External, Profile, Cascade & Feedforward Atmospheric, Sub-Atmospheric or low pressure capabilities upon process Gas Cabinet for up to 13 gases Liquid source precursor Cabinet and vaporisation Industrial Process PLC and Windows® based Mycore supervision
Options	Process related pump package Laminar Flow class 1 (vertical or horizontal) Furnace roof top with exhaust ducts or water cooled heat exchanger SECS/GEM compliant with SEMI E30, E37 Dedicated additional process features upon process requirements Manual or automatic boat loading
Integration	Robotics integration : Cassette to Cassette Automation and Wafer Transfer System

Anneal under neutral gases (N2, Ar)
Dry Oxidation with N2/O2, N2O
Wet Oxidation with pyrogenic H2/O2 ex-torch
Wet Oxidation with DI water bubbler
Wet Oxidation with Purified DI water by steamer
Boron or phosphorous doping with liquid, solid or gas source
High temperature diffusion of P or N junctions
Low temperature Annealing, Sinter, Alloy

LYDOP phosphorous doping with POCl3 or PH3
LYDOP boron doping with BCl3
LYTOX Dry or Wet High Precision Oxides
LYSINTER forming gas Anneal from 0% up to 100% H2

LPCVD Nitride : Stochiometric, Low-Stress, Oxynitride
LPCVD Poly : Flat, Low-Stress, Intrinsic or in-situ Doped P/N
LPCVD a-Si : Amorphous Intrinsic or in-situ Doped
LPCVD TEOS : Undoped, PSG/BSG/BPSG, Conformal
LPCVD MTO & SIPOS
LPCVD LTO : Undoped, PSG/BSG/BPSG
LPCVD HTO
LPCVD 3C-SiC
LPCVD Si on Sapphire
LPCVD Tungsten
LPCVD Graphene
LPCVD Multi-processes
Thermal ALD options